More huge news again for the Aussie-listed 4DS Memory (ASX:4DS) which has just announced an even more successful set of results than the ones delivered a few weeks ago which not only sent 4DS shares to the moon, but effectively changed the microprocessing landscape here at home and abroad.

4DS is focused on the high-density, high-volume memory segment in a world where any device or system that processes data needs storage and system memory for computation.

Late last week, 4DS said it was going to take another look at the game-changing August Fourth Platform Lot results which put Aussie on the semiconductor map and prompted a massive spike in the 4DS share price.

Monday morning 4DS now says the new results are “significantly better” than the original blockbuster numbers announced on 23 August.

The focus of the additional testing was to establish the optimal conditions of the 60nm memory cells in the megabit array, 4DS says. The read/write speed and endurance parameters are critical to the company’s goals in the memory space requiring DRAM-like performance.

Now, after successfully completing the second test cycle of the Fourth Platform Lot, the new analysis shows that the team has:

• Demonstrated write speed at 9.5 nanoseconds which significantly outperforms DRAM write speed

• Increased endurance in excess of 3 billion cycles on a megabit array

• Verified equivalent DRAM read speed

• Verified persistent memory with variable and tuneable retention


For the uninitiated:

Back in August, 4DS finally demonstrated the successful transfer of all new process improvements and learning cycles developed at the Stanford Nanofabrication Facility into the megabit array.

These process improvements included modification of the PCMO etch process and the composition of the memory cells, and it validated that the technology optimisation is transferable from fab to fab.

After extensive analysis 4DS showed, for the first time, a fully functioning megabit array with 60nm memory cells, access transistors and write circuitry. Big news.

Within the fully functioning megabit array, 4DS testing confirmed:

– Read and write speeds at 27 nanoseconds

– Endurance well in excess of 2 billion cycles; and

– Retention is persistent and tuneable


Further Significant Megabit Success

The focus of the analysis of the megabit array has been and remains on read/write speed and endurance. Now, after further extensive analysis, 4DS says it “has again shown a functioning megabit array with 60nm memory cells, access transistors and write circuitry.”

The additional testing within the megabit array, has confirmed 4DS has:

– Write speeds at 9.5 nanoseconds which is significantly superior to DRAM;

– Endurance in excess of 3 billion cycles;

– DRAM read speed; and

– Retention is persistent and tuneable


Exec chair David McAuliffe in a release to the ASX on Monday said that even at more than 3 billion cycles, right now the “upper limit of endurance is unknown”.

He says the results are currently beyond what the 4DS team have at hand to continue exploring – the company has, “a finite capacity due to equipment and manpower to test the upper limit in this additional analysis period.”

But there’s going to be all sorts of further analysis in the post as 4DS tries to map the scale of what its tech can do.

“These additional megabit array results are a significant milestone for the Company. Moving forward we will continue to undertake further analysis to test the upper limits of endurance and read/write characteristics for the purpose of further enhancements to the Platform.

“With significant results and a strong balance sheet the Company is extremely well placed to position itself in the memory space that targets a technology that can be closer to DRAM.”